The fabrication of a silicon solar cell on 6 in. pseudo‐square p‐type Czochralski grown silicon wafers featuring poly‐Si‐based passivating contacts for electrons at the cell rear side and screen‐printed aluminum fingers at the front side is demonstrated. The undiffused front surface is passivated with an Al₂O₃/SiN_x stack, and the rear surface is covered with a thin oxide/n⁺‐poly‐Si/Al₂O₃/SiN_x layer system, contacted by screen‐printed silver fingers. A loss analysis shows that the recombination losses at the metal contacts on both cell sides dominate the total energy losses. A voltage of 700 mV as the highest open‐circuit voltage from a batch of seven cells is achieved, and the best cell efficiency is 22.3%, independently confirmed.

中文翻译：

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效率为22.3％的p型后结太阳能电池，背面印有Al-印刷正面网格，并在氧化物触点上具有钝化的n +型多晶硅

演示了在6英寸伪正方形p型Czochralski生长的硅晶片上制造硅太阳能电池的过程，该晶片具有基于多晶硅的钝化触点，用于电池背面的电子，而丝网印刷的铝指位于正面。未扩散的前表面被Al ₂ O ₃ / SiN _x叠层钝化，后表面被薄氧化物/ n ⁺ -poly-Si / Al ₂ O ₃ / SiN _x覆盖。层系统，通过丝网印刷的银色手指接触。损耗分析表明，电池两侧的金属触点处的复合损耗占总能量损耗的主导。独立确认，这是七个批次电池中最高的700 mV开路电压，最佳电池效率为22.3％。