Abstract Chalcogenides, such as CdTe, Cu(In,Ga)(S,Se)2 and Cu2ZnSn(S,Se)4, have made significant progress in their thin-film photovoltaic performance, but the toxicity (CdTe) and scarcity (Cu(In,Ga)(S,Se)2) of the constituent elements, as well as the inevitable anti-site disorder (Cu2ZnSn(S,Se)4), limit the further improvement of efficiency. In this work, a new thin-film absorber, Cu2MnSn(S,Se)4, is studied in terms of both film growth and characterization. We prepare the precursor film by the sol-gel method followed by selenization at high temperature. The absorbance of the precursor film is higher than 98% at wavelengths of 200–1300 nm. The crystallinity and the phase transformation of the prepared film can be tailored greatly by modifying the selenization process. When the selenization temperature is 570 °C and the selenization time is 30 min, a highly-crystalline, stannite-structured Cu2MnSn(S,Se)4 film is obtained. A solar cell fabricated with such Cu2MnSn(S,Se)4 film as the absorber layer achieves efficiency of 1.79%, which is the highest efficiency reported to date for this material. This study demonstrates that Cu2MnSn(S,Se)4 is a promising photovoltaic material and has huge potential for the fabrication of low-cost solar cell.

中文翻译：

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一种有前途的光伏材料 Cu2MnSn(S,Se)4：薄膜生长及其在太阳能电池中的应用

摘要 CdTe、Cu(In,Ga)(S,Se)2 和 Cu2ZnSn(S,Se)4 等硫属化物在薄膜光伏性能方面取得了显着进展，但毒性（CdTe）和稀缺性（Cu (In,Ga)(S,Se)2) 以及不可避免的反位点无序 (Cu2ZnSn(S,Se)4) 限制了效率的进一步提高。在这项工作中，从薄膜生长和表征方面研究了一种新的薄膜吸收体 Cu2MnSn(S,Se)4。我们通过溶胶-凝胶法制备前体膜，然后在高温下进行硒化。前体薄膜在 200-1300 nm 波长处的吸光度高于 98%。通过改变硒化工艺可以极大地调整制备的薄膜的结晶度和相变。当硒化温度为 570 ℃，硒化时间为 30 min 时，获得了高度结晶、亚锡石结构的 Cu2MnSn(S,Se)4 薄膜。用这种 Cu2MnSn(S,Se)4 薄膜作为吸收层制造的太阳能电池实现了 1.79% 的效率，这是迄今为止该材料报道的最高效率。该研究表明，Cu2MnSn(S,Se)4 是一种很有前途的光伏材料，在制造低成本太阳能电池方面具有巨大的潜力。