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Mid-infrared characterization and modelling of transparent conductive oxides
Solar Energy ( IF 6.7 ) Pub Date : 2020-10-01 , DOI: 10.1016/j.solener.2020.09.020
Divya Ananthanarayanan , Juan J. Diaz Leon , Johnson Wong , Sylvain Nicolay , Armin G. Aberle , Jian Wei Ho

Abstract Mid-infrared spectroscopic characterization of doped layers is a rapid, contactless and non-destructive method of determining doped semiconductor layer properties, being used as an inline monitoring tool in industrial environments. Extending this technique to transparent conductive oxides (TCOs) would be tremendously beneficial, which otherwise requires intensive characterization to determine the layer properties. This work analyzes the usefulness of IR reflectometry in characterizing three different types of TCOs deposited on glass. An optical model is developed which fits to the experimental reflectance data and estimates critical parameters like effective mass ratio, plasma frequency and the complex refractive index of the layers in the mid-IR range.

中文翻译:

透明导电氧化物的中红外表征和建模

摘要 掺杂层的中红外光谱表征是一种确定掺杂半导体层特性的快速、非接触式和非破坏性方法,被用作工业环境中的在线监测工具。将此技术扩展到透明导电氧化物 (TCO) 将非常有益,否则需要深入表征以确定层属性。这项工作分析了红外反射计在表征沉积在玻璃上的三种不同类型的 TCO 方面的有用性。开发了一个光学模型,该模型适合实验反射率数据并估计关键参数,如有效质量比、等离子体频率和中红外范围内层的复折射率。
更新日期:2020-10-01
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