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Impact of ZnTe, SbZnTe and SnZnTe absorber materials for multi-layered solar cell: Parametric extraction and layer wise internal analysis
Optik ( IF 3.1 ) Pub Date : 2020-09-18 , DOI: 10.1016/j.ijleo.2020.165626
Paritosh Chamola , Poornima Mittal

In this research paper, Sb and Sn doped Zinc Telluride (ZnTe) thin films are prepared on the glass substrate through low-cost melt-quenching technique. These films are characterized to observe the nature of materials through XRD patterns. Subsequently, these materials are explored as the absorber-layer in the multi-layered solar cell. At 1.5 μm absorber thickness, the current density for SbZnTe and SnZnTe cells is improved by 1.1x and 2.6x respectively, as compared to ZnTe cell. This current density is augmented by 26 % and 31 % when thickness is incremented from 0.5 to 2.5 μm for SbZnTe and SnZnTe layers, respectively. The Fill Factor improves by 5.3 % for SbZnTe and 49 % for SnZnTe than ZnTe cell. Further, these cells are examined through horizontal-cut-line within the absorber layer and vertical-cut-line along the device thickness to explore layer-wise internal processes. Subsequently, potential distribution, Valance/Conduction band energy, charge carrier concentration, hole/electron current density, electric field and recombination rate are analyzed. The holes and electrons concentration are higher by 9.84 % and 8.96 % respectively for SnZnTe than SbZnTe cell. The conversion efficiency of SbZnTe and SnZnTe is achieved as 10.6 % and 17.8 % at 2.5 μm, which is higher by 1.15x and 1.93x in comparison to the ZnTe based solar cell. The SnZnTe cell shows holistic performance owing to its lowest band-gap of 1.39 eV. Moreover, this absorber material leads to highest charge carrier generation, thereby hole and electron current densities are improved by 11.86 % and 35.50 % than the SbZnTe cell.



中文翻译:

ZnTe,SbZnTe和SnZnTe吸收剂材料对多层太阳能电池的影响:参数提取和分层内部分析

本研究通过低成本的熔融淬火技术在玻璃基板上制备了掺Sb和Sn的碲化锌(ZnTe)薄膜。这些薄膜的特征是通过XRD图案观察材料的性质。随后,这些材料被探索为多层太阳能电池中的吸收层。在1.5μm的吸收层厚度下,与ZnTe电池相比,SbZnTe和SnZnTe电池的电流密度分别提高了1.1倍和2.6倍。当SbZnTe和SnZnTe层的厚度从0.5微米增加到2.5微米时,电流密度分别增加26%和31%。与ZnTe电池相比,SbZnTe的填充因子提高了5.3%,SnZnTe的填充因子提高了49%。进一步,通过吸收层内的水平切割线和沿着器件厚度的垂直切割线检查这些电池,以探索层状内部过程。随后,分析了电势分布,价/导带能,电荷载流子浓度,空穴/电子电流密度,电场和复合率。SnZnTe的空穴和电子浓度分别比SbZnTe电池高9.84%和8.96%。在2.5μm时,SbZnTe和SnZnTe的转换效率分别为10.6%和17.8%,与基于ZnTe的太阳能电池相比,转换效率提高了1.15x和1.93x。SnZnTe电池由于其最低的带隙1.39 eV而显示出整体性能。此外,这种吸收材料可产生最高的电荷载流子,从而使空穴和电子电流密度提高11倍。

更新日期:2020-10-02
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