Abstract Zinc oxy-selenide (Zn(O,Se)) is a prospective semiconductor that could be applied as a buffer layer in optoelectronic devices as an alternative for toxic CdS layers. A complete investigation of the effect of changing laser fluences from 4 to 6 J cm−2 on the phase composition,optical and electrical properties of Zn(O,Se) films prepared by pulsed laser deposition in a high vacuum at 500°C is reported. Deposited Zn(O,Se) films were characterized using HR-SEM, XRD, UV–Vis, and Hall effect measurements. HR-SEM micrographs illustrated the deposition of uniform, adherent, and compact Zn(O,Se) films. XRD investigation confirmed the formation of a Zn(O,Se) phase at 500°C for all three laser fluences. In addition, the UV–Vis transmittance spectra indicated the relative transparency of the deposited films in the visible range, accompanied by a redshift in the absorption edges as the laser fluences increased. Electrical measurements showed a significant increase of the electron concentration and electrical conductivity in the obtained films as laser fluence increased to 6 J cm−2.

中文翻译：

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激光能量密度对Zn(O,Se)薄膜结构和光电性能的影响

摘要 氧硒化锌 (Zn(O,Se)) 是一种有前景的半导体，可用作光电器件中的缓冲层，作为有毒 CdS 层的替代品。完整研究了激光能量密度从 4 J cm−2 变化到 6 J cm−2 对在 500°C 高真空中脉冲激光沉积制备的 Zn(O,Se) 薄膜的相组成、光学和电学性能的影响。 . 使用 HR-SEM、XRD、UV-Vis 和霍尔效应测量表征沉积的 Zn(O,Se) 薄膜。HR-SEM 显微照片显示了均匀、粘附和致密的 Zn(O,Se) 薄膜的沉积。XRD 研究证实，对于所有三种激光能量密度，在 500°C 下都形成了 Zn(O,Se) 相。此外，UV-Vis 透射光谱表明沉积薄膜在可见光范围内的相对透明度，随着激光能量密度的增加，吸收边会出现红移。电学测量表明，随着激光能量密度增加到 6 J cm-2，所得薄膜中的电子浓度和电导率显着增加。