Bismuth (Bi)-doped materials are capable of exhibiting broadband near-infrared (NIR) luminescence in 1,000–1,700 nm; driven by the potential use in lasers and broadband optical amplifiers for modern fiber communication systems, Bi-activated NIR luminescencent glasses and related devices have attracted much attention. Compared with glass systems, Bi-doped crystals as gain media usually have more regular crystal structures to produce stronger NIR signals, and developing such materials is highly desirable. Regarding the recent advances in Bi-doped NIR crystals, here, for the first time, we summarized such crystals listed as two main categories of halogen and oxide compounds. Then, by comparing the substitution site, coordination environment, emission and excitation luminescence peaks, emitting center species, and decay times of these known Bibased NIR crystals, discussion on how to design Bi-doped NIR crystals is included. Finally, the key challenges and perspectives of Bi-doped NIR crystals are also presented. It is hoped that this review could offer inspiration for the further development of Bi-doped NIR luminescent crystals and exploit its potential applications.

掺杂铋（Bi）的材料能够在1,000-1,700 nm处显示宽带近红外（NIR）发光；在现代光纤通信系统的激光器和宽带光放大器中的潜在用途的推动下，双激活NIR发光玻璃和相关设备引起了广泛关注。与玻璃系统相比，作为增益介质的掺Bi晶体通常具有更规则的晶体结构以产生更强的NIR信号，因此非常需要开发这种材料。关于Bi掺杂NIR晶体的最新进展，在这里，我们首次总结了这些晶体被列为卤素和氧化物的两个主要类别。然后，通过比较取代位点，配位环境，发射和激发发光峰，发射中心物种，以及这些已知的Bibased NIR晶体的衰变时间，以及有关如何设计Bi掺杂NIR晶体的讨论。最后，还介绍了双掺杂NIR晶体的主要挑战和前景。希望这篇综述可以为双掺杂NIR发光晶体的进一步开发提供灵感，并开发其潜在的应用。