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Combined Semiconductor Injection Magnetic Field Sensors for Wireless Information Networks
Radioelectronics and Communications Systems Pub Date : 2020-07-01 , DOI: 10.3103/s0735272720070043
I. M. Vikulin , L. F. Vikulina , V. E. Gorbachev , N. S. Mikhailov

The possibility of sensitivity increasing of magnetic field sensors by combining different types of sensitive elements in one sensor circuit is experimentally investigated. For this purpose, four new sensor constructions are proposed: based on bridge circuit, based on magnetotransistor in combination with magnetodiode or with second magnetotransistor and with frequency output. More thermostable and radiation-resistant sensor with 10 times greater sensitivity than in conventional two-diode bridge sensor is obtained with four polar magnetodiodes in bridge circuit, instead of two non-polar ones. Sensor constructions with two-collector magnetotransistors in combination with two polar magnetodiodes or one additional magnetotransistor are described. The sensitivity of such devices is 6 and 4 times higher compared to single-transistor sensors, while their temperature stability and radiation resistance increase. Relaxation generator circuit based on unijunction transistor is proposed as magnetic field sensor with frequency output. Inclusion of additional magnetodiode in generator circuit increases sensitivity by 2.3 times in comparison with single-transistor sensor and improves environmental stability. The described devices can be used as effective magnetic field sensors in wireless communication networks.

中文翻译:

用于无线信息网络的组合半导体注入磁场传感器

实验研究了通过在一个传感器电路中组合不同类型的敏感元件来提高磁场传感器灵敏度的可能性。为此,提出了四种新的传感器结构:基于桥式电路、基于磁晶体管结合磁二极管或第二个磁晶体管和频率输出。在桥电路中使用四个极性磁二极管而不是两个非极性磁二极管,可以获得比传统双二极管桥式传感器灵敏度高 10 倍的更耐热、更耐辐射的传感器。描述了具有两个集电极磁晶体管和两个极性磁二极管或一个附加磁晶体管的传感器结构。与单晶体管传感器相比,此类设备的灵敏度提高了 6 到 4 倍,同时它们的温度稳定性和抗辐射性增加。提出了基于单结晶体管的弛豫发生器电路作为具有频率输出的磁场传感器。与单晶体管传感器相比,在发生器电路中包含额外的磁二极管可将灵敏度提高 2.3 倍,并提高环境稳定性。所描述的设备可用作无线通信网络中的有效磁场传感器。
更新日期:2020-07-01
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