GaBa₂Cu₃O_7−x films were prepared on LaAlO₃ substrate by RF magnetic sputtering with different temperature and negative bias from 800 to 860 °C and 0 v to – 90 v, respectively. We investigate the relationship between temperature and negative bias and the performance of the film to analyze the most suitable deposition conditions. The surface texture and structure of GaBa₂Cu₃O_7−x films were observed by X-ray diffraction (XRD), Raman measurement, field emission scanning electron microscope (FESEM). The superconducting properties were measured by physical property measurement system (PPMS). It was found that the structure, surface morphology, and superconducting property of GaBa₂Cu₃O_7−x film are seriously affected by the temperature and negative bias. The crystallinity and surface quality of the film first increases and then decreases with the increase in the deposition temperature, and reach the best at 840 °C. In order to further improve the performance of the film, a negative bias voltage of 0 to − 90v was applied on the basis of this temperature, and the best quality film was obtained under a negative bias of – 30 v. The surface of the film prepared under the conditions of 840 °C and − 30v is the most dense and uniform, and the critical current density reaches 0.16MA/cm², which is almost 3 times higher than that of the film prepared without negative bias.

通过在不同温度和负偏压（分别为800至860°C和0 v至– 90 v）下的RF磁溅射在LaAlO ₃衬底上制备GaBa ₂ Cu ₃ O _{7− x}膜。我们研究了温度与负偏压之间的关系以及薄膜的性能，以分析最适合的沉积条件。GaBa ₂ Cu ₃ O _{7− x}的表面织构通过X射线衍射（XRD），拉曼测量，场发射扫描电子显微镜（FESEM）观察薄膜。通过物理性质测量系统（PPMS）测量超导性质。发现GaBa ₂ Cu ₃ O _{7− x}的结构，表面形态和超导性能胶片会受到温度和负偏压的严重影响。薄膜的结晶度和表面质量首先随着沉积温度的升高而增加，然后降低，并在840°C时达到最佳。为了进一步改善薄膜的性能，在此温度下施加0至-90v的负偏压，并在– 30 v的负偏压下获得最佳质量的薄膜。在840°C和-30v的条件下制备的薄膜最致密和均匀，临界电流密度达到0.16MA / cm ²，几乎是没有负偏压的薄膜的3倍。