The A³⁺B⁵⁺O₄ binary oxides have a variety of different structures—monoclinic, and tetragonal—making them suitable candidates for laser hosts, energy storage, microwave dielectric substrates, etc. In this work, we prepared two tetragonal AVO₄ (A = Eu, Y) ceramics with zircon structure. The powder X-ray diffraction (XRD) has been used to study phase purity of the zircon-type AVO₄ (A = Eu, Y) ceramics. There was a significant correlation between microwave dielectric properties and relative density. Dense EuVO₄ and YVO₄ ceramics sintered at 1180 °C and 1240 °C exhibited promising microwave dielectric properties with ε_r = 11.6 and 9.9, Q × f = 46,862 GHz and 56,174 GHz, τ_f = − 49.6 ppm/°C and − 43.7 ppm/°C, respectively. In addition, the relationship between microwave dielectric properties and crystal structure of AVO₄ (A = Eu, Y) ceramics were discussed by packing fraction and bond valence theory in detail.

A ³⁺ B ⁵⁺ O ₄二元氧化物具有多种不同的结构（单斜晶和四方晶），使其适合用于激光主体，储能，微波介电基板等。在这项工作中，我们制备了两种四方晶AVO ₄（A = Eu，Y）具有锆石结构的陶瓷。粉末X射线衍射（XRD）已用于研究锆石型AVO ₄（A = Eu，Y）陶瓷的相纯度。微波介电特性和相对密度之间存在显着的相关性。密EuVO ₄和YVO _4个陶瓷在1180烧结℃下和1240℃下表现出有希望的用微波介电性能ε _{- [R} = 11.6和9.9，Q  ×  ˚F  = 46862 GHz和56174千兆赫，τ _˚F  43.7 PPM /℃， - = - 49.6 PPM /℃并。此外，通过堆积分数和键合价理论详细讨论了AVO ₄（A = Eu，Y）陶瓷的微波介电性能与晶体结构之间的关系。