The possibility for kinetic stabilization of prospective 2D AlN was explored by rationalizing metal organic chemical vapor deposition (MOCVD) processes of AlN on epitaxial graphene. From the wide range of temperatures which can be covered in the same MOCVD reactor, the deposition was performed at the selected temperatures of 700, 900, and 1240 °C. The characterization of the structures by atomic force microscopy, electron microscopy and Raman spectroscopy revealed a broad range of surface nucleation and intercalation phenomena. These phenomena included the abundant formation of nucleation sites on graphene, the fragmentation of the graphene layers which accelerated with the deposition temperature, the delivery of excess precursor-derived carbon adatoms to the surface, as well as intercalation of sub-layers of aluminum atoms at the graphene/SiC interface. The conceptual understanding of these nanoscale phenomena was supported by our previous comprehensive ab initio molecular dynamics (AIMD) simulations of the surface reaction of trimethylaluminum, (CH₃)₃Al, precursor with graphene. A case of applying trimethylindium, (CH₃)₃In, precursor to epitaxial graphene was considered in a comparative way.

中文翻译：

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纳米级现象决定了AlN在石墨烯/ SiC界面处的沉积和嵌入。

通过合理化外延石墨烯上的AlN的金属有机化学气相沉积（MOCVD）工艺，探索了可能的2D AlN动力学稳定的可能性。在同一MOCVD反应器中可以覆盖的广泛温度范围内，在700、900和1240°C的选定温度下进行沉积。通过原子力显微镜，电子显微镜和拉曼光谱对结构的表征揭示了广泛的表面成核和嵌入现象。这些现象包括在石墨烯上大量形成成核位点，随着沉积温度而加速的石墨烯层破碎，将过量的前体衍生碳原子传递到表面，以及在石墨烯/ SiC界面处插入铝原子的子层。对这些纳米级现象的概念性理解得到了我们先前的综合研究的支持从头算分子动力学（AIMD）模拟前驱体三甲基铝（CH ₃）₃ Al与石墨烯的表面反应。以比较的方式考虑了将三甲基铟（CH ₃）₃ In前体施加到外延石墨烯的情况。