In this work, we investigate the transverse transport properties of few-layers MoS 2 using a Conductive Atomic Force Microscopy based technique. We find that the system changes between a low-force regime, characterized by a nearly-ideal contact between the MoS 2 flake and the substrate, and a high-force regime, for which this contact starts to become highly non-ideal. We propose a 3-diode model that effectively describes the current-voltage characteristics of few-layers MoS 2 . From this model, we estimate how fast the energy gaps of two-dimensional MoS 2 materials change as a function of the applied force. From our analysis, we estimate that MoS 2 -Au Schottky barrier heights change at the rate of 0.21, 0.23, and 0.78 meV nN −1 for the few-layers, three-layers, and two-layers MoS 2 , respectively. Our work opens up new possibilities of investigating and controlling the electronic properties of 2D semiconducting ...

中文翻译：

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通过力显微镜控制2D半导体的电子带

在这项工作中，我们使用基于导电原子力显微镜的技术研究了几层MoS 2的横向传输特性。我们发现，该系统在以MoS 2薄片与基材之间接近理想接触为特征的低作用力状态与以该接触开始变得高度不理想的高作用力状态之间变化。我们提出了一个三二极管模型，该模型有效地描述了几层MoS 2的电流-电压特性。根据该模型，我们估计二维MoS 2材料的能隙随所施加的力变化的速度有多快。根据我们的分析，我们估计，对于少数几层，三层和两层MoS 2，MoS 2 -Au肖特基势垒高度分别以0.21、0.23和0.78 meV nN -1的速率变化。