Herein, the optically induced operation of ZnO‐based laser structures is reported, fabricated with plasma‐assisted molecular beam epitaxy (PA‐MBE) on native ZnO substrate. ZnMgO is used both to confine the optical mode within ZnO waveguide and to form quantum barriers of ZnO quantum wells. The resonator of these devices is defined by reactive ion etching (RIE) with a chlorine/argon plasma. The lowest laser threshold is measured to be approximately 0.4 MW cm⁻² at room temperature when excited via the third harmonic of a YAG:Nd (355 nm). It is observed that the mode spacing depends on both the resonator length and the excitation power density, which is explained by introducing plasmonic corrections to the waveguide refractive index.

中文翻译：

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ZnO / ZnMgO同质外延激光器的结构及其性能

本文报道了在天然ZnO衬底上使用等离子辅助分子束外延（PA-MBE）制造的基于ZnO的激光结构的光诱导操作。ZnMgO既用于限制ZnO波导内的光学模式，又用于形成ZnO量子阱的量子势垒。这些设备的谐振器由具有氯/氩等离子体的反应离子蚀刻（RIE）定义。当通过YAG：Nd（355 nm）的三次谐波激发时，最低激光阈值在室温下测得约为0.4 MW cm ^-2。可以看出，模式间隔既取决于谐振器长度，又取决于激励功率密度，这可以通过对波导折射率引入等离子体校正来解释。