Abstract MoS2 has potential application in the fields of electronics and optics. However, thin films with non-uniform or local compressive strain can form winkles. The presence of wrinkles has great effects on the performance of the transition metal dichalcogenides (TMDs) materials. In this work, by in-situ transmission electron microscopy (TEM), we tracked the formation and disappearance of MoS2 wrinkles to reveal the microstructure of wrinkles and its effects on electrical properties. It is found that compressive stress can lead to the formation of wrinkles, and the wrinkles disappeared with removal of the stress. The exx maps show that MoS2 nanosheets corrugated as the strain reached 3.3% for 15 layers, accompanied by new diffraction points in fast Fourier transform (FFT) image. In contrast, removal of the stress resulted in the disappearance of wrinkles and new diffraction points, and MoS2 nanosheets restored to its initial morphology. Moreover, wrinkles also affect the electrical properties of MoS2 nanosheets. The existence of wrinkles caused an increase of the current, and the disappearance of the wrinkles accompanied by the current decreased, which is due to the piezoresistive effect. This study is helpful to understand the properties of MoS2 nanostructures and is of great significance to the structural design in the electronic field.

中文翻译：

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MoS2皱纹的原位TEM研究及其对电性能的影响

摘要 MoS2 在电子学和光学领域具有潜在的应用前景。然而，具有非均匀或局部压缩应变的薄膜会形成皱纹。皱纹的存在对过渡金属二硫属化物（TMDs）材料的性能有很大影响。在这项工作中，我们通过原位透射电子显微镜 (TEM) 跟踪了 MoS2 皱纹的形成和消失，以揭示皱纹的微观结构及其对电性能的影响。研究发现，压应力会导致皱纹的形成，而随着应力的消除，皱纹就会消失。exx 图显示 MoS2 纳米片在 15 层应变达到 3.3% 时呈波纹状，并伴随快速傅立叶变换 (FFT) 图像中的新衍射点。相比之下，消除应力导致皱纹和新的衍射点消失，并且二硫化钼纳米片恢复到其初始形态。此外，皱纹也会影响 MoS2 纳米片的电学性能。皱纹的存在导致电流增加，伴随电流而消失的皱纹减少，这是由于压阻效应。该研究有助于了解MoS2纳米结构的性质，对电子领域的结构设计具有重要意义。电流伴随的皱纹消失减少，这是由于压阻效应。该研究有助于了解MoS2纳米结构的性质，对电子领域的结构设计具有重要意义。电流伴随的皱纹消失减少，这是由于压阻效应。该研究有助于了解MoS2纳米结构的性质，对电子领域的结构设计具有重要意义。