Abstract In this study, 1.0-μm thick crystalline (K1-xNax)NbO3 (KNN) films were deposited onto various substrates at 350 °C for use in piezoelectric energy harvesters (PEHs). A Sr2Nb3O10 (SN) nanosheet monolayer fabricated on these substrates acted as the seed-layer for the formation of a [0 0 1]-oriented crystalline KNN film at 350 °C. The [0 0 1]-oriented KNN films deposited on a SN/Ni substrate exhibited smaller er (2 7 8) and larger d33 (166 pm/V) values than those of a randomly oriented crystalline KNN film. Because the output power of the PEH is generally proportional to d332/er, a [0 0 1]-oriented KNN thin film is a good material for use in a PEH. A KNN/SN/Ni PEH shows a large output power density of 20 μW/mm3 (2.9 μW) at 1.0 MΩ based on a soft tapping motion of the finger. The KNN/SN fabricated on the Ni substrate was transferred to a flexible and transparent ITO/polyethylene naphthalate (I-PEN) substrate. The transparent KNN/SN/I-PEN PEH exhibited a promising output power density of 7.02 μW/mm3 with a maximum output voltage of 4.2 V, indicating its applicability as a power source of an electrochromic smart glass window.

中文翻译：

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低温制备的[0 0 1]取向结晶铌酸钾薄膜用于压电能量收集器

摘要 在这项研究中，1.0 微米厚的结晶 (K1-xNax)NbO3 (KNN) 薄膜在 350 °C 下沉积到各种基板上，用于压电能量收集器 (PEH)。在这些基板上制造的 Sr2Nb3O10 (SN) 纳米片单层充当种子层，用于在 350°C 下形成 [0 0 1] 取向的结晶 KNN 膜。[0 0 1] 取向的 KNN 薄膜沉积在 SN/Ni 衬底上表现出比随机取向的结晶 KNN 薄膜更小的 er (2 7 8) 和更大的 d33 (166 pm/V) 值。由于 PEH 的输出功率通常与 d332/er 成正比，因此 [0 0 1] 取向的 KNN 薄膜是用于 PEH 的良好材料。KNN/SN/Ni PEH 在 1.0 MΩ 下显示出 20 μW/mm3 (2.9 μW) 的大输出功率密度，基于手指的轻敲运动。在 Ni 基板上制造的 KNN/SN 被转移到柔性透明的 ITO/聚萘二甲酸乙二醇酯 (I-PEN) 基板上。透明的 KNN/SN/I-PEN PEH 的输出功率密度为 7.02 μW/mm3，最大输出电压为 4.2 V，表明其可用作电致变色智能玻璃窗的电源。