The semiconductor packaging field is evolving rapidly due to strong competition in customer demands for increased functionality and performance, further miniaturization, heightened reliability and lower costs. The lifetime reliability and sequential performance of solid-state products are mainly based on the device junction temperature (Tj). The main concerns of efficient thermal management in heat source-based electronic packages are controlling and reducing the device junction temperature and total thermal resistance (R_th). The optimization of process parameters to develop an anodic aluminium oxide nanopore (AAO-np) structure on an Al5052 alloy substrate using an electrochemical process (two-step anodization) is proposed based on the Taguchi orthogonal array (L9). The four major parameters are the electrolyte, anodization time, bath temperature, and applied voltage, which are varied at three different levels. This experiments aim to finalize suitable process parameters and their levels towards optimum R_th and T_j. The morphology of the step-wise preparation of AAO-np structure is discussed for the optimized conditions of 0.3 M oxalic acid, a 3 h anodization time, a 30 V applied voltage, and a bath at room temperature. The resulting AAO-np structure has a pore diameter of 40 to 55 nm and a height of 6 to 7 μm. This formation significantly reduces R_th by 24.58% and T_j by 24.66% for the electronic package compared to a bare Al substrate.

由于客户对增加功能和性能，进一步小型化，提高可靠性和降低成本的需求的激烈竞争，半导体封装领域正在迅速发展。固态产品的使用寿命可靠性和顺序性能主要取决于器件结温（Tj）。基于热源的电子封装中有效热管理的主要问题是控制和降低器件结温和总热阻（R _th）。基于Taguchi正交阵列（L9），提出了使用电化学工艺（两步阳极氧化）在Al5052合金基底上开发阳极氧化铝纳米孔（AAO-np）结构的工艺参数的优化。四个主要参数是电解质，阳极氧化时间，浴温和施加电压，它们在三个不同级别上有所不同。该实验旨在最终确定合适的工艺参数及其水平，以达到最佳R _th和T _j。讨论了逐步制备AAO-np结构的形态，以优化条件为0.3 M草酸，3 h阳极氧化时间，30 V施加电压和室温浴。所得的AAO-np结构具有40至55nm的孔径和6至7μm的高度。与裸露的Al衬底相比，这种形成对于电子封装而言显着地降低了R _th 24.58％和T _j降低了24.66％。