The present study was conducted to investigate the optical constants of copper (Cu)-doped zinc oxide (ZnO) films annealed at different temperatures. The absorption coefficient of the films increased by changing the annealing temperature. The lattice dielectric constant \( \varepsilon_{L} \), concentration of the free-charge carriers, plasma frequency, Spitzer–Fan model, and the waste heat of electrical energy in the films were analyzed using the refractive index n and extinction coefficient k spectra. The results of the study showed that changing the annealing temperature values significantly influences the refractive index and extinction coefficients of CZO films. The increase in the electrical susceptibility \( \chi_{c} \) in annealed films can be due to the increased concentration of free-charge carriers in these films. The maximum electrical energy loss (tan δ) in the films as a function of photon energy occurred at 400 °C. The as-deposited films showed minimum volume and surface energy loss functions in their range of optical band gaps. The variations in the phase and group velocity of the films with post-annealing temperature were consistent with the variations in the reduction of the density of free-charge carriers for these films. Films annealed at 600 °C had the maximum root mean square roughness of about 5.62 nm. Films annealed at 400 °C had the maximum extinction coefficients k such that they increased for all ranges of wavelength. \( \chi_{c} \) had the maximum values in the films annealed at 600 °C, for all ranges of wavelength, and they increased by increasing the wavelength. The increase in \( \chi_{c} \) of the films annealed at 600 °C can be attributed to the increase in the density of free-charge carriers in these films.

进行本研究以研究在不同温度下退火的掺杂铜（Cu）的氧化锌（ZnO）膜的光学常数。膜的吸收系数通过改变退火温度而增加。利用折射率n和消光系数分析了薄膜的晶格介电常数\（\ varepsilon_ {L} \），自由电荷载流子浓度，等离子体频率，Spitzer-Fan模型以及薄膜中的电能余热。k个光谱。研究结果表明，改变退火温度值会显着影响CZO膜的折射率和消光系数。电化率的增加\（\ chi_ {c} \）退火薄膜中的电荷增加可能是由于这些薄膜中自由载流子的浓度增加所致。最大电能损耗（tanδ δ在膜作为光子能量的函数）发生在400℃。沉积的薄膜在其光学带隙范围内显示出最小的体积和表面能损失功能。薄膜的相速度和群速度随退火温度的变化与这些薄膜自由电荷载流子密度降低的变化一致。在600°C退火的薄膜的最大均方根粗糙度约为5.62 nm。在400°C退火的薄膜具有最大消光系数k，因此它们在所有波长范围内都增加。\（\ chi_ {c} \）在所有波长范围内，在600°C退火的薄膜中具有最大值，并且通过增加波长而增加。在增加\（\ chi_ {C} \）在600℃下退火的膜的可以归因于在这些膜中的自由载流子的密度的增加。