The barrier properties of graphene coating are highly correlated with its microstructure which is then determined by the chemical vapor deposition (CVD) growth history on metals. We demonstrate here an unrevealed selective area oxidation of copper under graphene, which is derived from the implicit-etching-controlled CVD growth mode of graphene. By charactering and analyzing the selective area patterns of Cu oxidation, an etched pattern trace with nano/microvoids during graphene growth has been proposed to account for this. Based on such selective oxidation of Cu, distributed galvanic corrosion will be triggered and proceed locally at the interface of graphene-Cu system to coalescence together under a continuous corrosion environment, eventually presenting a homogeneous oxidation of Cu and gradual decoupling of graphene-Cu system. This discovery will assist our understanding of the barrier properties of two-dimensional materials and can be extended to other applications related to quality monitoring of grown materials and defects-based chemical modifications.

中文翻译：

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源自化学气相沉积石墨烯微结构的铜的选择性区域氧化

石墨烯涂层的阻隔性能与其微观结构高度相关，然后由金属上的化学气相沉积 (CVD) 生长历史决定。我们在这里展示了石墨烯下铜的未揭示的选择性区域氧化，这源自石墨烯的隐式蚀刻控制的 CVD 生长模式。通过表征和分析铜氧化的选择性区域图案，已经提出在石墨烯生长过程中具有纳米/微孔洞的蚀刻图案痕迹来解释这一点。基于Cu的这种选择性氧化，将在连续腐蚀环境下触发并在石墨烯-Cu体系界面局部进行分布式电偶腐蚀并聚结在一起，最终呈现Cu的均质氧化和石墨烯-Cu体系的逐渐解耦。