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A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications
Semiconductor Science and Technology ( IF 1.9 ) Pub Date : 2020-09-15 , DOI: 10.1088/1361-6641/abaa5b
Minaxi Dassi 1 , Jaya Madan 2 , Rahul Pandey 2 , Rajnish Sharma 2
Affiliation  

Tunnel field effect transistors (TFETs) have proved their potential for many possible electronic circuit applications. However, with the variety of TFET structures being worked upon it has been an unresolved challenge to optimize them for the applications to which they are best suited. In this paper we present a detailed comparative analysis of the linearity distortion and the radiofrequency (RF) performance parameters of a proposed heterojunction Mg 2 Si source double gate TFET (HMSDG-TFET) and a conventional homojunction Si source DG-TFET (SSDG-TFET). A source material engineering scheme is utilized to implement a staggered type 2 heterojunction at the source–channel junction by replacing the source material with Mg 2 Si (a low band gap material) to enhance the ON current (2.5 × 10 –4 A µ m −1 ), reduce the threshold voltage (0.26 V) and achieve a steeper subthreshold swing (10.05 mV decade −1 ). For linearity and distortion ...

中文翻译:

一种用于射频集成电路应用的新型原材料设计的双栅极隧道场效应晶体管

隧道场效应晶体管(TFET)已经证明了其在许多可能的电子电路应用中的潜力。然而,随着各种TFET结构的研究,针对最适合它们的应用对其进行优化一直是一个尚未解决的挑战。在本文中,我们对拟议的异质结Mg 2 Si源双栅极TFET(HMSDG-TFET)和常规的同质结Si源DG-TFET(SSDG-TFET)的线性失真和射频(RF)性能参数进行了详细的比较分析。 )。通过采用Mg 2 Si(低带隙材料)代替源材料以增强ON电流(2.5×10 –4 A µ m),利用源材料工程方案在源-沟道结处实施交错的2型异质结。 -1),降低阈值电压(0。26 V)并实现了更陡峭的亚阈值摆幅(10.05 mV October -1)。对于线性和失真...
更新日期:2020-09-16
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