Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm—due to its large and tuneable direct band gap, n- and p-doping capability up to the largest bandgap material AlN and a growth and fabrication technology compatible with the current visible InGaN-based LED production. However AlGaN based UV-emitters still suffer from numerous challenges compared to their visible counterparts that become most obvious by consideration of their light output power, operation voltage and long term stability. Most of these challenges are related to the large bandgap of the materials. However, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance of UV emitters to be pushed far beyond the current state. One example is the very recent realization of edge emitting lase...

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2020年紫外线发射器路线图

固态紫外线发射器相对于传统紫外线源具有许多优势。（Al，In，Ga）N材料系统最适合生产400 nm至210 nm范围内的LED和激光二极管-由于其大且可调的直接带隙，n和p掺杂能力直至最大带隙材料AlN以及与当前可见的基于InGaN的LED生产兼容的生长和制造技术。然而，与AlGaN基紫外线发射剂相比，基于可见光的发射器，其工作电压和长期稳定性，其可见光发射器仍面临许多挑战。这些挑战中的大多数与材料的大带隙有关。然而，自1970年代首次实现UV电致发光以来的发展表明，对理解和技术的改进使UV发射器的性能大大超越了当前的状态。一个例子是边缘发射激光器的最新实现。