Strong damping‐like spin‐orbit torque (τ_DL) has great potential for enabling ultrafast energy‐efficient magnetic memories, oscillators, and logic. So far, the reported τ_DL exerted on a thin‐film magnet must result from an externally generated spin current or from an internal non‐equilibrium spin polarization in non‐centrosymmetric GaMnAs single crystals. Here, for the first time a very strong, unexpected τ_DL is demonstrated from current flow within ferromagnetic single layers of chemically disordered, face‐centered‐cubic CoPt. It is established here that the novel τ_DL is a bulk effect, with the strength per unit current density increasing monotonically with the CoPt thickness, and is insensitive to the presence or absence of spin sinks at the CoPt surfaces. This τ_DL most likely arises from a net transverse spin polarization associated with a strong spin Hall effect, while there is no detectable long‐range asymmetry in the material. These results broaden the scope of spin‐orbitronics and provide a novel avenue for developing single‐layer‐based spin‐torque memory, oscillator, and logic technologies.

中文翻译：

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化学无序铁磁单层中的大块阻尼类自旋轨道转矩的观测

强阻尼状自旋轨道转矩（τ _DL）具有用于使超快节能磁性存储器，振荡器和逻辑的巨大潜力。到目前为止，报道的τ _DL施加在薄膜磁铁必须来自外部产生自旋电流或从在非中心对称的GaMnAs单晶内部非平衡自旋极化。这里，对于第一次非常强的，意外的τ _DL从化学无序，面心立方的CoPt的铁磁单个层内的电流流动证明。这是在这里建立了新的τ _DL这是一个整体效应，单位电流密度的强度随CoPt厚度单调增加，并且对CoPt表面上是否存在自旋沉不敏感。此τ _DL最可能从具有强烈的自旋霍尔效应相关联的净横向自旋极化产生，同时存在在材料中没有可检测的长程不对称。这些结果拓宽了自旋电子学的范围，并为开发基于单层的自旋转矩存储器，振荡器和逻辑技术提供了一条新颖的途径。