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Theoretical simulation of the degradation on GaAs sub-cell with different defects induced by 1MeV electron irradiation
Optik ( IF 3.1 ) Pub Date : 2020-09-16 , DOI: 10.1016/j.ijleo.2020.165532
Junwei Li , Zujun Wang , Yuanyuan Xue , Chengying Shi , Hao Ning , Rui Xu , Qianli Jiao , Tongxuan Jia

The degradation on the GaAs sub-cell of GaInP/GaAs/Ge triple-junction solar cells caused by different types of defects induced by 1 MeV electron irradiation is studied by numerical simulation. The simulation model is introduced that includes geometric structure, material, doping concentration and electron irradiation defects. The degradation results of short-circuit current, open-circuit voltage, maximum power, conversion efficiency and external quantum efficiency versus different defects have been investigated, and the degradation mechanism is analyzed. The results show that when the defect concentration and carrier capture cross-section is the same, the related parameters degradation of GaAs sub-cell is more serious when the defect energy level is closed to the intrinsic Fermi energy level. Meanwhile, the degradation of related parameters induced by E2 (Ec-0.14 eV) and E5 (Ec-0.96 eV) defects are more serious than the degradation of related parameters induced by other defects. The research will provide a method to analyze the detailed degradation mechanism induced by electron irradiation and a reference to analyze the degradation of solar cells induced by space particles.



中文翻译:

1MeV电子辐照导致不同缺陷的GaAs子电池降解的理论模拟

通过数值模拟研究了由1 MeV电子辐照引起的不同类型缺陷引起的GaInP / GaAs / Ge三结太阳能电池GaAs子电池的退化。介绍了包含几何结构,材料,掺杂浓度和电子辐照缺陷的仿真模型。研究了短路电流,开路电压,最大功率,转换效率和外部量子效率对不同缺陷的降解结果,并分析了其降解机理。结果表明,当缺陷浓度和载流子俘获截面相同时,当缺陷能级接近内在费米能级时,GaAs子电池的相关参数退化更加严重。与此同时,E c -0.14 eV)和E 5(E c -0.96 eV)缺陷比其他缺陷引起的相关参数退化更严重。该研究将提供一种分析电子辐照引起的详细降解机理的方法,并为分析空间粒子引起的太阳能电池的降解提供参考。

更新日期:2020-09-16
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