Abstract The current article is focused on developing a new class of chalcogenide absorber layer. A multiple stacking of metal selenides with C-60 as an intermatrix layer is fabricated on a glass substrate. Post-annealing of sequential temperatures from 150 °C to 350 °C is applied to the multilayer thin film structure. X-ray diffraction revealed a dominant CIGS chalcopyrite structure with a preferential (1 1 2) plane orientation upon maximal annealing temperature. Morphological analysis has displayed fullerene whiskers imposed in spherical grains background surface. Films have displayed an appreciable absorption coefficient (≥105 cm−1). Tauc plots revealed a near-optimal single direct band gap transition at 1.64 eV for annealed (350 °C) film.

中文翻译：

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C-60晶须在Cu2Se/C-60/In3Se2/C-60/Ga2Se3多层结构中掺入黄铜矿CuInxGa1-xSe2的实现

摘要 当前文章的重点是开发一类新的硫属化物吸收层。在玻璃基板上制造以 C-60 作为基质层的金属硒化物的多重堆叠。对多层薄膜结构应用从 150°C 到 350°C 的连续温度的后退火。X 射线衍射揭示了在最大退火温度下具有优先 (1 1 2) 平面取向的主要 CIGS 黄铜矿结构。形态分析表明，球状颗粒背景表面有富勒烯晶须。薄膜显示出可观的吸收系数 (≥105 cm-1)。Tauc 图显示退火 (350 °C) 薄膜在 1.64 eV 处具有近乎最佳的单直接带隙跃迁。