The solute segregation behavior at two types of carbide-ferrite interfaces was investigated by Atom Probe Tomography (APT) technique in a 16MND5 weld before and after ion irradiation. The two types of carbides are cementite and M_2.0-3.2C carbides. Effects of these intergranular carbides on solute segregation behavior at the vicinal Grain Boundaries (GBs) were discussed. No influence was observed within the first tens of nm away from carbides. However, these carbides introduce effective sites for solute segregation (P, Mn, Si and Ni). The segregation of one or several chemical species was observed at interfaces. It is also revealed that the intersection region between carbide and the adjacent GB favors higher P segregation than any other region. After ion irradiation, there is a significant increase of P segregation level at both cementite-ferrite interfaces and M_2.0-3.2C carbide-ferrite interfaces, which could be attributed to a Radiation Enhanced Segregation (RES) of P. The increased P segregation at interfaces could contribute to the radiation embrittlement. Under both conditions, there is a higher average P segregation level at cementite-ferrite interfaces than M_2.0-3.2C carbide-ferrite interfaces.

在16MND5焊缝中，通过原子探针层析成像（APT）技术研究了离子辐照前后两种类型的碳化物-铁素体界面上的溶质偏析行为。碳化物的两种类型是渗碳体和M _2.0-3.2碳碳化物。讨论了这些晶间碳化物对邻近晶粒边界（GBs）上溶质偏析行为的影响。在离开碳化物的前几十纳米内未观察到影响。但是，这些碳化物会引入有效的溶质偏析部位（P，Mn，Si和Ni）。在界面处观察到一种或几种化学物质的分离。还揭示出，碳化物和相邻GB之间的相交区域比其他任何区域都有利于更高的P偏析。离子辐照后，渗碳体-铁素体界面和M _2.0-3.2处的P偏析水平均显着增加C碳化物-铁素体界面，可以归因于P的辐射增强偏析（RES）。界面处P偏析的增加可能有助于辐射脆化。在两种情况下，渗碳体-铁素体界面的平均P偏析水平均高于M _2.0-3.2 C碳化物-铁素体界面。