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Lasing of Injection Microdisks with InAs/InGaAs/GaAs Quantum Dots Transferred to Silicon
Technical Physics Letters ( IF 0.6 ) Pub Date : 2020-09-15 , DOI: 10.1134/s1063785020080295
A. E. Zhukov , E. I. Moiseev , A. M. Nadtochii , A. S. Dragunova , N. V. Kryzhanovskaya , M. M. Kulagina , A. M. Mozharov , S. A. Kadinskaya , O. I. Simchuk , F. I. Zubov , M. V. Maximov

Abstract

AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots have been transferred to the surface of a silicon wafer using an indium solder. The microlasers have a common electric contact deposited on top of the residual n+-GaAs substrate and individual addressing is ensured by placing the microdisks with the p contact down onto separate contact pads formed on silicon. No effect of a non-native substrate on the electrical, threshold, thermal, and spectral characteristics has been established. The microdisks can operate in continuous-wave regime without forced cooling at a threshold current density of ~0.7 kA/cm2. The lasing wavelength is stable (<0.1 nm/mA) to the injection current.



中文翻译:

带InAs / InGaAs / GaAs量子点转移到硅的注入微盘激光

摘要

具有InAs / InGaAs量子点的AlGaAs / GaAs微盘激光器已使用铟焊料转移到硅晶片的表面。微激光器具有沉积在残留的n + -GaAs衬底顶部的公共电触点,通过将具有p触点的微盘向下放置在硅上形成的单独接触垫上,可以确保单独寻址。尚未确定非本机基板对电,阈值,热和光谱特性的影响。微型磁盘可以在连续波状态下运行,而无需在〜0.7 kA / cm 2的阈值电流密度下进行强制冷却。激光波长对注入电流稳定(<0.1 nm / mA)。

更新日期:2020-09-16
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