Abstract

We report an experimental study of the electrical properties of the interface between the Al₂O₃ passivating coating grown by plasma enhanced atomic layer deposition at different temperatures and the p-CdHgTe (x_CdTe = 0.22) coating grown by molecular beam epitaxy via measuring the C–V characteristics of MIS structures. It has been established that, at an Al₂O₃ growth temperature of 200°C, the concentration of acceptors in CdHgTe increases due to dissociation and, at a temperature of 80°C, the spread of the insulator capacitance and built-in charge increases. The optimum temperature for growing the passivating Al₂O₃ coating on CdHgTe lies in the range of 120–160°C.

中文翻译：

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生长温度对CdHgTe表面原子层沉积形成Al 2 O 3薄膜钝化性能的影响

摘要

我们报告了通过在不同温度下通过等离子体增强原子层沉积而生长的Al ₂ O ₃钝化涂层与通过分子束外延生长的p -CdHgTe（x _CdTe = 0.22）涂层之间的界面的电性能的实验研究。MIS结构的C – V特性。已经确定，在Al ₂ O _3的生长温度为200°C时，CdHgTe中的受主浓度由于解离而增加，并且在80°C的温度下，绝缘体电容和内置电荷的扩散增加。生长钝化铝的最佳温度CdHgTe上的₂ O ₃涂层温度在120–160°C之间。