The Al/CRNNW/n-Si device with a coronene nanowire (CRNNW) interlayer was fabricated by a physical vapor deposition technique and characterized under dark various illumination intensities via I–V measurements at room temperature. The device has exhibited rectifying behavior and the rectifying ratio values decreased from 1.16 × 10³ to 1.44 at 4 V biases by increasing light intensity from 20 to 100 mW. The Al/CRNNW/n-Si device was characterized by various techniques such as thermionic emission theory, Norde, and Cheung technique, and device parameters were obtained. The ideality factor and barrier height values were determined as 21.33 and 0.75 eV, respectively, under dark condition from the thermionic emission theory. The series resistance of the device is obtained as 3090 Ω from the Norde method and 9840 Ω from the Cheung method for the dark condition. The current transport mechanism of the device was discussed in detail for various regions from lnI–lnV plot. The coronene layer can be thought of and improved as interfacial material for metal–semiconductor devices.

铝/ CRNNW / n-Si装置与ron金属纳米线（CRNNW）中间层是通过物理气相沉积技术制造的，并在暗处通过室温下的I–V测量来表征各种照明强度。器件表现出整流性能，整流比值从1.16×10 ³减小通过将光强度从20 mW增加到100 mW，在4 V偏压下达到1.44Ω。利用热电子发射理论，Norde和Cheung技术等多种技术对Al / CRNNW / n-Si器件进行了表征，并获得了器件参数。根据热电子发射理论，在黑暗条件下，理想因子和势垒高度值分别确定为21.33和0.75 eV。对于黑暗条件，该器件的串联电阻从Norde方法获得为3090Ω，从Cheung方法获得为9840Ω。从ln I– ln V图的各个区域详细讨论了该器件的电流传输机制。可以将co烯层视为并改进为金属-半导体器件的界面材料。