Cu₃SbSe₄-Based materials were fabricated through Sn-doping and AgSb_0.98Ge_0.02Se₂ incorporation and their thermoelectric properties were investigated in the temperature range from 300 K to 675 K. A remarkable enhancement in thermoelectric performance was obtained, which can be ascribed to the synergistic adjustment of electrical and thermal transport. The introduction of AgSb_0.98Ge_0.02Se₂ nanoparticles strengthened phonon scattering in the composites, resulting in a low thermal conductivity. Simultaneously, a high power factor was maintained. As a result, a maximum figure of merit of 1.23 was obtained at 675 K for the sample Cu₃Sb_0.96Sn_0.04Se₄–3 wt% AgSb_0.98Ge_0.02Se₂, which is one of the highest values ever reported in the Cu₃SbSe₄-based system.

中文翻译：

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在基于Cu3SbSe4的系统中实现超低导热率和高热电性能

通过Sn掺杂和AgSb _0.98 Ge _0.02 Se _2的掺入制备了Cu ₃ SbSe _4基材料，并在300 K至675 K的温度范围内研究了它们的热电性能。热电性能得到了显着提高，可以达到归因于电力和热力运输的协同调整。AgSb _0.98 Ge _0.02 Se ₂纳米颗粒的引入增强了复合材料中的声子散射，导致导热系数低。同时，维持了高功率因数。结果，样品铜在675 K下获得的最大品质因数为1.23₃ Sb _0.96 Sn _0.04 Se ₄ -3 wt％AgSb _0.98 Ge _0.02 Se ₂，这是基于Cu ₃ SbSe ₄的体系中报道的最高值之​​一。