The droplet contact angle and morphology of the growth interface (vertical, tapered or truncated facets) are known to affect the zincblende (ZB) or wurtzite (WZ) crystal phase of III-V nanowires (NWs) grown by the vapor-liquid-solid method. Here, we present a model which describes the dynamics of the morphological evolution in self-catalyzed III-V NWs in terms of the time-dependent (or length-dependent) contact angle or top nanowire radius under varying material fluxes. The model fits quite well the contact angle dynamics obtained by in situ growth monitoring of self-catalyzed GaAs NWs in a transmission electron microscope. These results can be used for modeling the interface dynamics and the related crystal phase switching and for obtaining ZB-WZ heterostructures in III-V.

中文翻译：

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模拟自催化 GaAs 纳米线的界面形态和晶体相变的动力学

已知液滴接触角和生长界面的形态（垂直、锥形或截断面）会影响由汽-液-固生长的 III-V 族纳米线 (NW) 的闪锌矿 (ZB) 或纤锌矿 (WZ) 晶相方法。在这里，我们提出了一个模型，该模型描述了自催化 III-V 纳米线在不同材料通量下的时间依赖性（或长度依赖性）接触角或顶部纳米线半径的形态演变动力学。该模型非常适合通过透射电子显微镜中自催化 GaAs NW 的原位生长监测获得的接触角动力学。这些结果可用于模拟界面动力学和相关的晶相转换，并用于获得 III-V 族中的 ZB-WZ 异质结构。