The photoconductive detector based on a graphene-silicon heterostructure retains excellent optoelectrical properties, in which the graphene plays an indispensable role, acting as the carrier transporting channel. Herein, we systematically investigate by simulation and experiment how doping graphene will affect the performance of graphene-silicon hybrid photoconductors. Compared with lightly p-doped graphene devices, the responsivity can be made nine times better through increasing the p-type doping level. In addition, the net photocurrent can also be enhanced by about four times through increasing the n-type doping level of graphene. We attribute this improvement to the barrier height change adjusted by doping graphene, which can optimize the lifetime and transport of photocarriers. Such a graphene-doping method, that manipulates the junction region, could offer useful guidance for achieving high-performance graphene photodetectors.

中文翻译：

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掺杂石墨烯对石墨烯-硅混合光电导探测器性能的影响

基于石墨烯-硅异质结构的光电导探测器保留了优异的光电性能，其中石墨烯作为载流子传输通道起着不可或缺的作用。在此，我们通过模拟和实验系统地研究了掺杂石墨烯将如何影响石墨烯-硅杂化光电导体的性能。与轻 p 型掺杂石墨烯器件相比，通过增加 p 型掺杂水平可以使响应度提高 9 倍。此外，通过增加石墨烯的 n 型掺杂水平，净光电流也可以提高约 4 倍。我们将这种改进归因于通过掺杂石墨烯调整的势垒高度变化，这可以优化光载流子的寿命和传输。这种石墨烯掺杂方法，