Herein, we investigate wet-chemical etching of Ge (100) in acidic H₂O₂ solutions for technologically advanced device processing. Nanoscale etching kinetics data were provided by inductively coupled plasma mass spectrometry (ICP-MS) measurements. Rotation rate- dependent measurement showed that the hydrodynamics of the system is important. The dependence of the etch rate on the HCl concentration was considered for the range 0.001–1 M HCl. A stark difference morphologically for >1 M HCl, which resulted in a rough surface confirmed by atomic force microscopy (AFM) images, has been observed. X-ray photoelectron spectroscopy (XPS) measurements provided insight in the surface chemistry of etching for device processing. Electrochemical measurements confirmed that the etching process follows a chemical mechanism. Based on X-ray photoelectron spectroscopy (XPS) data, we present reaction schemes that help to understand the results.

在此，我们研究了酸性 H ₂ O ₂中 Ge (100) 的湿化学蚀刻技术先进的设备处理解决方案。纳米级蚀刻动力学数据由电感耦合等离子体质谱 (ICP-MS) 测量提供。与旋转速率相关的测量表明系统的流体动力学很重要。在 0.001-1 M HCl 范围内考虑了蚀刻速率对 HCl 浓度的依赖性。已经观察到 >1 M HCl 在形态上的明显差异，这导致原子力显微镜 (AFM) 图像证实了粗糙的表面。X 射线光电子能谱 (XPS) 测量提供了对器件加工蚀刻表面化学的深入了解。电化学测量证实蚀刻过程遵循化学机制。基于 X 射线光电子能谱 (XPS) 数据，