An inductively coupled plasma mass spectrometry (ICP-MS) protocol was developed for trace impurity analysis of the halide perovskite semiconductor, CsPbBr₃. Method validation was performed by doping solution synthesized CsPbBr₃ samples with distinct amounts of a multi-element mixture. The limit of detection (LOD) for the twelve doped elements (Zn, Cr, Ga, Mn, Tl, Bi, As, In, Sn, Ni, Se and Sb) ranged from 0.0004 μg L⁻¹ to 0.377 μg L⁻¹, whereas the limit of quantification (LOQ) ranged from 0.001 μg L⁻¹ to 1.26 μg L⁻¹. Apart from Cr and Se, a linear relationship between doped and detected concentration was observed amongst these elements. The validated ICP-MS process was applied to a high temperature zone-refined CsPbBr₃ ingot to study impurity segregation. The total impurity levels (TIL) of the zone-refined samples range from 15.7 ± 1.3 to 54.6 ± 1.2 μg g⁻¹ and depend on the positions of the samples within the ingot.

中文翻译：

---

使用ICP-MS分析室温半导体辐射检测材料CsPbBr3的纯度

开发了电感耦合等离子体质谱（ICP-MS）协议，用于对钙钛矿卤化物半导体CsPbBr ₃进行痕量杂质分析。通过用不同量的多元素混合物掺杂溶液合成的CsPbBr ₃样品进行方法验证。十二种掺杂元素（Zn，Cr，Ga，Mn，Tl，Bi，As，In，Sn，Ni，Se和Sb）的检出限（LOD）为0.0004μgL ^-1至0.377μgL ^-1，而定量限（LOQ）为0.001μgL ^-1至1.26μgL ^-1。除了铬和硒外，在这些元素中还观察到掺杂浓度和检测浓度之间的线性关系。经过验证的ICP-MS工艺应用于高温区精制的CsPbBr ₃铸锭，以研究杂质偏析。区域精炼样品的总杂质水平（TIL）为15.7±1.3至54.6±1.2μgg ^-1，并取决于样品在铸锭中的位置。