Ultrascaled double-gate monolayer SnS2MOSFETs for high performance and low power applications,Physical Review Applied

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Ultrascaled double-gate monolayer SnS2MOSFETs for high performance and low power applications
Physical Review Applied ( IF 4.6 ) Pub Date :
Shiying Guo, Yangyang Wang, Xuemin Hu, Shengli Zhang, Hengze Qu, Wenhan Zhou, Zhenhua Wu, Xuhai Liu, Haibo Zeng

The shrinking of field-effect transistors (FETs) is in great demand for next-generation integrated circuits. However, traditional silicon FETs are reaching the scaling limits, and it is therefore urgent to explore more alternative paradigms. Two-dimensional (2D) materials have attracted great research enthusiasm owing to their abilities of suppressing short-channel effects. Herein, we evaluate the electronic properties and device performance of the ultra-scaled 2D SnS

_{2}

metal-oxide-semiconductor FETs (MOSFETs) via ab initio} simulations. Specifically, the I

_{O n}

of the 5.5 nm monolayer SnS

_{2}

n-MOSFETs is ultrahigh, up to 3400 $

A /

m, a s a r e s u l t o f t h e s m a l l e f f e c t i v e m a s s e s o f t h e c o n d u c t i o n b a n d m i n i m u m o f m o n o l a y e r S n S

{2} $. U n t i l t h e c h a n n e l l e n g t h i s s c a l e d d o w n t o 4 n m, t h e M O S F E T s c a n f u l f i l l t h e s t a n d a r d s o f I$ {On}

, d e l a y t i m e, a n d p o w e r d i s s i p a t i o n p r o d u c t o f i n t e r n a t i o n a l r o a d m a p f o r d e v i c e s a n d s y s t e m s (I R D S) 2018 g o a l s f o r h i g h - p e r f o r m a n c e d e v i c e s . M o r e o v e r, t h e 5.5 n m m o n o l a y e r S n S

_{2}$ n-MOSFETs can also fulfill the IRDS 2018 requirements for the 2028 horizon for low-power applications. This work demonstrates that the monolayer SnS

_{2}

is favorable channel material for future competitive ultra-scaled devices. {I.

中文翻译：

适用于高性能和低功耗应用的超大规模双栅单层SnS2MOSFET

下一代集成电路对场效应晶体管（FET）的缩小有很大的需求。然而，传统的硅FET正在达到规模极限，因此迫切需要探索更多替代范例。二维（2D）材料由于具有抑制短通道效应的能力而吸引了极大的研究热情。本文中，我们评估了超尺寸二维SnS的电子特性和器件性能

_{2}

通过从头算起模拟金属氧化物半导体FET（MOSFET）。具体来说，我

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5.5 nm单层SnS的数量

_{2}

n-MOSFET超高，高达3400美元

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{2} $。 ü ñ Ť 一世升 Ť H Ë C H 一种 ñ ñ Ë 升升 Ë ñ G Ť H 一世 s s C 一种升 Ë d d Ø w ñ Ť Ø 4 ñ 米， Ť H Ë 中号 Ø 小号 F Ë Ť s C 一种 ñ F ü 升 F 一世升升 Ť H Ë s Ť 一种 ñ d 一种 [R d s Ø F 一世$ {上}