Abstract Uniform and continuous Al2O3 thin films were prepared by the chemical liquid deposition (CLD) method. The breakdown field strength of the amorphous CLD-Al2O3 film is 1.74 MV/cm, making it could be used as a candidate dielectric film for electronic devices. It was further proposed to use the CLD-Al2O3 film as an electron blocking layer in a triboelectric nanogenerator (TENG) for output performances enhancement. Output voltages and currents of about 200 V and 9 µA were obtained, respectively, which were 2.6 times and 3 times, respectively, higher than TENG device without an Al2O3. A colloidal condensation-based procedure controlled by adjusting the pH value of the solution was proposed to be the mechanism of CLD, which was confirmed by the Tyndall effect observed in the growth liquid. The results indicated that the CLD could serve as a low-cost, room temperature, nontoxic and facile new method for the growth of functional thin films for semiconductor device applications.

中文翻译：

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化学液相沉积法制备氧化铝薄膜及其在器件中的应用

摘要 采用化学液相沉积(CLD) 方法制备了均匀连续的Al2O3 薄膜。非晶CLD-Al2O3薄膜的击穿场强为1.74 MV/cm，可作为电子器件的候选介电薄膜。进一步建议使用 CLD-Al2O3 薄膜作为摩擦纳米发电机 (TENG) 中的电子阻挡层，以提高输出性能。分别获得了约 200 V 和 9 µA 的输出电压和电流，分别比没有 Al2O3 的 TENG 器件高 2.6 倍和 3 倍。通过调节溶液的 pH 值控制的基于胶体缩合的程序被认为是 CLD 的机制，这通过在生长液中观察到的廷德尔效应得到证实。