Abstract Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (I light/I dark) of ∼104 and a ultraviolet/visible rejection ratio (R 260 nm/R 400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.

中文翻译：

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基于垂直排列的单晶β-Ga2O3纳米线阵列的日盲紫外光电探测器

摘要 垂直排列的纳米线阵列具有高表面积体积比和高效的光捕获吸收，在光电器件中备受关注。在本文中，通过电感耦合等离子体蚀刻技术制造了平均直径/高度为 110/450 nm 的垂直 β-Ga2O3 纳米线阵列。然后通过在纳米线阵列上沉积叉指 Ti/Au 电极制造了金属-半导体-金属结构的日盲光电探测器 (PD)。所制造的 β-Ga2O3 纳米线 PD 的光电流和响应率比相应的薄膜 PD 高约 10 倍。此外，它还具有约 104 的高光电流与暗电流比（I light/I dark）和 3.5 × 103 的紫外/可见光抑制比（R 260 nm/R 400 nm）以及毫秒级光响应时间。