In the present work, we have fabricated a highly photo responsive Schottky barrier diode based on cerium infused vanadium pentoxide thin film (Ce-V₂O₅) as a interfacial layer. It was coated on a glass slide by low-cost sol-gel spin-coating technique and annealed at 500 °C. Structure, surface morphology, optical and electrical characteristic of Ce infused V₂O₅ films with different Ce concentrations viz 0, 2, 4 and 6 wt% were investigated. X-ray diffraction (XRD) pattern exposed that all coated films are tetragonal structure. And a peak shift was recorded after doping Ce ion into the V₂O₅ system. FE-SEM images showed a smooth nanorods and nanoplate-like structures in nano-scale region. Topology view by AFM showed a significant decrease in surface roughness of the film at different wt.% of Ce. The incorporation of Ce concentration based on the optical absorbance and band gap energy were studied, using UV–vis spectroscopy. Current-voltage (I–V), characteristics, photo-diode parameters of the Cu/Ce-V₂O₅/n-Si diodes were evaluated under dark and light exposed conditions. A maximum quantum efficiency of 25.54 % was achieved for the MIS diode fabricated with 6 % of Ce. The photosensitivity of the Cu/Ce-V₂O₅/n-Si diode 100 times higher than pure diode. Photodiode parameters and I–V analysis revealed that Ce with 6 wt.% is appropriate for the development of high quality photodiode and photo detector applications based to its electrical-performance.

在目前的工作中，我们已经制备了一种高光响应肖特基势垒二极管，该器件基于注入铈的五氧化二钒薄膜（Ce-V ₂ O ₅）作为界面层。通过低成本的溶胶-凝胶旋涂技术将其涂布在载玻片上，并在500°C下退火。研究了不同浓度Ce分别为0、2、4和6 wt％的Ce注入V ₂ O ₅薄膜的结构，表面形态，光学和电学特性。X射线衍射（XRD）图样显示，所有涂膜均为四方结构。将Ce离子掺杂到V ₂ O _5中后，记录到峰位移系统。FE-SEM图像显示出纳米级区域内的光滑纳米棒和纳米板状结构。通过AFM的拓扑图显示，在不同的Ce重量％下，膜的表面粗糙度显着降低。使用紫外可见光谱研究了基于吸光度和带隙能量的铈浓度的掺入。Cu / Ce-V ₂ O ₅ / n-Si二极管的电流-电压（IV），特性，光电二极管参数在黑暗和光照条件下进行了评估。用6％Ce制成的MIS二极管的最大量子效率达到25.54％。Cu / Ce-V ₂ O ₅的光敏性/ n-Si二极管比纯二极管高100倍。光电二极管参数和I–V分析表明，具有6 wt。％的Ce的电气性能适合于开发高质量光电二极管和光电检测器应用。