Abstract The dynamics of changing phases of InxSey thin film alloy grown on annealing of the SELD films were analyzed. The thin film samples provide mixed phases of γ-In2Se3, In4Se3, and InSe at the annealing temperatures of 523 K to 623 K and attain a single phase at 673 K. The presence of strong γ-In2Se3 phase at 673 K was supported by the vibrational spectra. The films are homogeneous throughout, without cracks well cover the entire glass substrate. The crystallites are densely packed, irregular shaped, and complex structured. The bandgap (Eg) varies from 1.92 eV to 2.39 eV; refractive index (n) from 2.75 to 2.55 while the absorption coefficient (α) values limit within 2 × 104 to 1.5 × 105 cm−1. This mobility (μ) of the films increases from 871 to 1413 cm2/V-s with changing temperature, the change is attributed to the growth of γ-In2Se3 crystallites. The bandgap tuning, high absorption coefficient, and mobility values exhibited by the films make these suitable for use as buffer layers in the solar cell structure. The undertaken In2Se3 semiconductor, among many other applications, is a candidate to replace CdS in solar cells.

中文翻译：

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多面 InxSey 薄膜退火生长γ-In2Se3 单层及其物理性质研究

摘要 分析了SELD薄膜退火过程中生长的InxSey薄膜合金的相变动力学。薄膜样品在 523 K 至 623 K 的退火温度下提供 γ-In2Se3、In4Se3 和 InSe 的混合相，并在 673 K 下获得单相。 673 K 下强 γ-In2Se3 相的存在得到了支持振动光谱。薄膜整体均匀，没有裂纹，很好地覆盖了整个玻璃基板。微晶密集，形状不规则，结构复杂。带隙 (Eg) 从 1.92 eV 到 2.39 eV；折射率 (n) 从 2.75 到 2.55，而吸收系数 (α) 值限制在 2 × 104 到 1.5 × 105 cm-1 内。随着温度的变化，薄膜的迁移率 (μ) 从 871 增加到 1413 cm2/Vs，这种变化归因于γ-In2Se3 微晶的生长。薄膜表现出的带隙调谐、高吸收系数和迁移率值使其适合用作太阳能电池结构中的缓冲层。在许多其他应用中，所采用的 In2Se3 半导体是替代太阳能电池中 CdS 的候选者。