Negligible threshold-voltage shift is reported for oxide thin-film transistors (TFTs) under high current(3 μ A) and tensile bending stress (2 mm radius). The good stability is attributed to a circular TFT structure with electrically shorted top and bottom gates, and a polyimide substrate embedded with carbon-nanotubes for mechanical support and damage-free detachment from carrier glass. The circular structure leads to uniform electric field distribution across the channel, hard saturation in output characteristics, independence from tensile bending direction-related degradation, as well as isolation of the channel from stress concentrated points, which arise from local electric-field crowding at sharp corners or channel edges. The double-gate topology increases gate-drivability and achieves volume-accumulation, which minimizes the influence of defects at the channel surface and slight variations in carrier concentration during stress. Furthermore, the presence of two gate...

中文翻译：

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具有顶部和底部栅极的阈值防电压偏移圆形氧化物薄膜晶体管，可实现高弯曲稳定性

据报道，在高电流（3μA）和拉伸弯曲应力（半径2 mm）下，氧化物薄膜晶体管（TFT）的阈值电压漂移可忽略不计。良好的稳定性归因于圆形TFT结构，其顶部和底部栅极电短路，以及嵌入了碳纳米管的聚酰亚胺基板，可进行机械支撑并从载玻片上无损伤地分离。圆形结构会导致整个通道内电场分布均匀，输出特性出现硬饱和，不受与拉伸弯曲方向相关的退化影响，以及通道与应力集中点的隔离，应力集中点是由局部电场在尖锐处拥挤而产生的角或通道边缘。双栅极拓扑可提高栅极驱动能力并实现体积累积，这样可以最大程度地减小通道表面缺陷的影响以及应力过程中载流子浓度的轻微变化。此外，存在两个门...