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Interface Modification of Perovskite/Hole Transport Layer with Tetraphenyldibenzoperiflanthene for Highly Efficient and Stable Solar Cells.
ACS Applied Materials & Interfaces ( IF 9.5 ) Pub Date : 2020-09-14 , DOI: 10.1021/acsami.0c12544
Shiqi Li 1 , Yukun Wu 1 , Chenxi Zhang 1 , Yifan Liu 1 , Qinjun Sun 1 , Yanxia Cui 1 , Shengzhong Frank Liu 2 , Yuying Hao 1
Affiliation  

Interface engineering has been recognized as a very effective method to simultaneously improve both efficiency and stability in perovskite solar cells (PSCs). In this work, we report using an excellent small molecular material tetraphenyldibenzoperiflanthene (DBP) to modify the perovskite/Spiro-OMeTAD interface to achieve significantly improved solar cell performance. It is found that the ultrathin DBP interlayer accelerates hole transfer across the FAxMA1–xPbInBr3–n/Spiro-OMeTAD interface and effectively reduces the nonradiative recombination. The Kelvin probe force microscopy and energy band analyses reveal that the DBP modification helps build better matched energy level alignment and smaller energy loss for more fluent hole transport. Consequently, the DBP-treated PSCs achieve an enhanced open-circuit voltage as high as 1.184 V and fill factor as high as 78.2% as well as the negligible hysteresis. The champion PSC made with DBP gives a PCE of 21.49%, significantly increased compared to 19.68% from the reference cell without the modification. Moreover, DBP also serves as a water-resistant protection for improved moisture stability. The PCE of the DBP-treated cells without encapsulation remains more than 84% of its initial efficiency, which is significantly higher than that of the reference PSCs (65%) after 20 days of storage under an air environment with 50–65% humidity. This study provides an effective interface modification material to address notorious stability problems in Spiro-OMeTAD-based PSCs.

中文翻译:

钙钛矿/孔传输层与四苯基二苯并perflanthene的界面修饰,用于高效稳定的太阳能电池。

界面工程被公认为是一种同时提高钙钛矿太阳能电池(PSC)效率和稳定性的非常有效的方法。在这项工作中,我们报告了使用一种出色的小分子材料四苯基二苯并perflanthene(DBP)来修改钙钛矿/ Spiro-OMeTAD界面,从而显着提高了太阳能电池的性能。发现超薄的DBP中间层可加速空穴在FA x MA 1– x PbI n Br 3– n上的转移。/ Spiro-OMeTAD接口,有效地减少了非辐射重组。开尔文探针力显微镜和能带分析显示,DBP改性有助于建立更好的匹配能级对准和更小的能量损失,从而使空穴传输更流畅。因此,经DBP处理的PSC可以实现高达1.184 V的增强的开路电压和高达78.2%的填充系数,并且滞后可以忽略不计。用DBP制成的冠军PSC的PCE为21.49%,与未经修改的参考电池的19.68%相比显着提高。此外,DBP还可以用作防水保护剂,以改善湿气稳定性。未经封装的DBP处理细胞的PCE仍超过其初始效率的84%,在湿度为50%至65%的空气环境中存放20天后,该值显着高于参考PSC(65%)。这项研究为解决基于Spiro-OMeTAD的PSC中众所周知的稳定性问题提供了有效的界面修改材料。
更新日期:2020-10-07
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