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Theoretical modeling and simulation-based assessment of graded-bandgap AlGaAs/GaAs electron-injection cathode
Ultramicroscopy ( IF 2.2 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.ultramic.2020.113121
Juyang Xia , Jijun Zou , Xincun Peng , Wenjuan Deng , Yijun Zhang

The electron emission model of a negative electron affinity graded-bandgap AlGaAs/GaAs electron-injection cathode was developed from two-dimensional continuity equations. The emission current was obtained from a simulation of the model, and the emission current efficiency and emission current per unit length were calculated. Based on the simulation results and preparation conditions, the range of optimum parameters for the cathode structure were determined. The ranges of optimum thickness for the p-AlGaAs and the graded-bandgap p-AlGaAs layers were 0.05-0.15 μm and 0.1-0.3 μm, respectively. The optimum width of the base electrode ranged from 1 to 4 μm, and the optimum molar ratios of Al in the p-AlGaAs and the n-AlGaAs layers were 0.2-0.3 and 0.4-0.5, respectively. This abrupt PN heterojunction inhibited the hole current and increased the emission current efficiency, with a maximum value of 25.3%. According to the emission current per unit length, the optimum range of width of emission unit surface was 6 to 10 μm, and the peak emission current per unit length reached 43.2 μA/μm.

中文翻译:

梯度带隙 AlGaAs/GaAs 电子注入阴极的理论建模和基于仿真的评估

负电子亲和能梯度带隙 AlGaAs/GaAs 电子注入阴极的电子发射模型是从二维连续性方程发展而来的。从模型的模拟中获得发射电流,并计算发射电流效率和每单位长度的发射电流。根据模拟结果和制备条件,确定了阴极结构的最佳参数范围。p-AlGaAs 和渐变带隙 p-AlGaAs 层的最佳厚度范围分别为 0.05-0.15 μm 和 0.1-0.3 μm。基极的最佳宽度为1~4μm,p-AlGaAs和n-AlGaAs层中Al的最佳摩尔比分别为0.2-0.3和0.4-0.5。这种突变的 PN 异质结抑制了空穴电流并提高了发射电流效率,最大值为 25.3%。根据单位长度的发射电流,发射单位表面宽度的最佳范围为6~10 μm,单位长度的峰值发射电流达到43.2 μA/μm。
更新日期:2020-12-01
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