TiO₂ thin films are deposited by direct current magnetron sputtering method on the silicon and quartz substrates. The effect of annealing temperature on the film properties are analysed by using X-ray diffraction (XRD), Raman scattering, atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical spectroscopy measurements. Raman and XRD results reveal that the crystal structure of the TiO₂ film is strongly affected by the annealing temperature. The crystal structure of the coated film is changed from amorphous to anatase structure after annealing at 500 °C. Anatase and rutile phases of TiO₂ start to coexist after annealing at 800 °C. Rutile phases of TiO₂ become dominant for film annealed at 900 °C. SEM and AFM images uncover that the morphology, grain size and surface roughness of TiO₂ films vary with the annealing temperature. The optical band gap decreases from 3.35 to 2.90 eV as the phase transforms from amorphous to rutile.

通过直流磁控溅射法在硅和石英基板上沉积TiO ₂薄膜。通过使用X射线衍射（XRD），拉曼散射，原子力显微镜（AFM），扫描电子显微镜（SEM）和光谱学测量来分析退火温度对薄膜性能的影响。拉曼和XRD结果表明，TiO ₂膜的晶体结构受退火温度的强烈影响。在500℃下退火后，涂膜的晶体结构从无定形变为锐钛矿结构。在800°C退火后，TiO _2的锐钛矿相和金红石相开始共存。TiO _2的金红石相在900°C下退火的薄膜中占主导地位。SEM和AFM图像显示TiO ₂薄膜的形貌，晶粒尺寸和表面粗糙度随退火温度而变化。当相位从无定形转变为金红石时，光学带隙从3.35 eV减小到2.90 eV。