The process corner refers to the variation into fabrication parameters used to apply during integrated circuit design to the semiconductor wafer. Inconsistency during design and deviation of voltage and temperature during its operation widens the worst-case margin and significantly degrades the performance. The impact of variation is more pronounced at smaller technology node (< 90 nm). In CAD-tool variability are modeled as fast and slow MOS transistors. Design parameters must be validated at all corners before sending them to be fabricated. In this work, the schematic of the substitution box (SBOX) implemented with the cadence tool at CMOS 45 nm technology node and their variability analyzed. The impact of variation onto the SBOX parameter (power, delay, and energy) has presented at process corners with ± 10% variation in supply voltage and temperature (27–80 °C). The simulation result shows that the best choice of SBOX implementation when NMOS tends to get fast and PMOS tends to get slow.

工艺角是指制造参数的变化，该制造参数用于在集成电路设计期间应用于半导体晶片。设计过程中的不一致以及操作过程中电压和温度的偏差扩大了最坏情况的余量，并显着降低了性能。变化的影响在较小的技术节点（<90 nm）处更加明显。在CAD工具中，可变性建模为快速和慢速MOS晶体管。在发送设计参数之前，必须在所有角落验证设计参数。在这项工作中，用节奏工具在CMOS 45 nm技术节点处实现的替换盒（SBOX）的示意图及其可变性进行了分析。变化对SBOX参数（功率，延迟，和能量）出现在工艺角，电源电压和温度（27–80°C）的变化为±10％。仿真结果表明，当NMOS趋于快速而PMOS趋于缓慢时，SBOX实现的最佳选择。