Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categories: (1) top-down lithographic patterning and etching of bulk crystals and epitaxial films; (2) bottom-up, locally catalyzed crystal growth of nanowires; and (3) hybrid methods that combine aspects of categories (1) and (2). In this article, we examine the relative merits and unique attributes of each of these paradigms for nanowire synthesis. We review literature relevant to nanowire fabrication methods, faceting and dimensional control (diameter and length), positioning and alignment, doping, bulk and surface defects, and formation of unique nanowire heterostructures and metastable phases. Finally, we describe the factors governing selection among top-down, bottom-up, and hybrid methods to fabricate nanowire structures depending on their desired structural features and applications.

半导体纳米线已证明具有令人兴奋的特性，可用于纳米光子学，传感器，能源技术以及路线图和超越路线图的电子设备。纳米线的制造方案多种多样，但可分为三大类：（1）自上而下的光刻图案以及块状晶体和外延膜的蚀刻；（2）自下而上的，局部催化的纳米线晶体生长；（3）结合类别（1）和（2）方面的混合方法。在本文中，我们研究了纳米线合成的每个范例的相对优点和独特属性。我们审查与纳米线制造方法，刻面和尺寸控制（直径和长度），定位和对齐，掺杂，体和表面缺陷，以及独特的纳米线异质结构和亚稳相的形成有关的文献。