Perovskite/silicon tandem solar cells have reached certified efficiencies of 28% (on 1 cm² by Oxford PV) in just about 4 years, mostly driven by the optimized design in the perovskite top cell and crystalline silicon (c-Si) bottom cell. In this review, we focus on the structural adjustment of the bottom cell based on the structural evolution of monolithic perovskite/silicon tandem solar cells to improve their performance. To begin with, c-Si solar cells are classified into silicon homojunction and silicon heterojunction (SHJ) devices according to temperature tolerance, and the corresponding structural features are presented. Then, the evolution of monolithic perovskite/silicon tandem cells based on c-Si homojunction and heterojunction bottom devices is summarized. An appropriate candidate of the c-Si bottom cell for monolithic perovskite/silicon tandem cells is proposed, mainly including passivated emitter and rear cell devices, the tunnel oxide passivated contact cell, and SHJ devices. In brief, our review will emphasize the important role of the c-Si bottom cell with different passivation structures for perovskite/silicon tandem cells, which provides a guidance to enhance the performance of tandem cells.

钙钛矿/硅串联太阳能电池的认证效率达到28％（在1 cm ^2上）由牛津光伏公司（Oxford PV）负责，在大约4年的时间里，主要是由钙钛矿顶部电池和晶体硅（c-Si）底部电池的优化设计驱动的。在这篇综述中，我们基于整体钙钛矿/硅串联太阳能电池的结构演变，着重于底部电池的结构调整，以提高其性能。首先，根据温度容限，将c-Si太阳能电池分为硅同质结和异质结（SHJ）器件，并介绍了相应的结构特征。然后，总结了基于c-Si同质结和异质结底部器件的整体钙钛矿/硅串联电池的发展。提出了适用于整体钙钛矿/硅串联电池的c-Si底部电池的候选材料，主要包括钝化的发射极和后电池器件，隧道氧化物钝化接触电池和SHJ器件。简而言之，我们的综述将强调具有不同钝化结构的c-Si底部电池对于钙钛矿/硅串联电池的重要作用，这为增强串联电池的性能提供了指导。