The explosive development of lead halide perovskite (LHP) nanocrystals (NCs)/quantum dots (QDs) in light-emitting diodes (LEDs) has been witnessed in the past years, because of the direct bandgap, narrow bandwidth, tunable bandgaps, long charge diffusion length, and high carrier mobility. Doping perovskite ABX₃ with targeted ions could tune the crystalline structure, electronic structure, luminescence properties, radiative recombination dynamics, and electrical features, which would result in the enhancement of device performances. Recently, there have been amounts of researches about doped perovskite, including A-site, B-site, and X-site dopants, but no report has summarized a comprehensive review of doping in perovskite nanocystals/QDs and the effect of doping on LEDs. In this review, we summarized an overview of recent progress in the effects of A-site, B-site, and X-site doping ions on LHP NCs/QDs. We outline the effects of dopants on crystal structure, optical bandgaps, electronic structure, photoluminescence, carrier dynamics and the application of doped perovskite NCs/QDs in LEDs. The review demonstrates doping in different sites exhibit diverse effects; thus, targeted doping is important to control and improve the material properties and device performances. We conclude that doping is a promising option for improving the device efficiency and stability and give a potential outlook in the field of doped perovskite NCs/QDs.

近年来，由于直接带隙，窄带宽，可调带隙，长电荷，在发光二极管（LED）中见证了卤化钙钛矿（LHP）纳米晶体（NCs）/量子点（QD）的爆炸性发展。扩散长度和高载流子迁移率。掺杂钙钛矿ABX ₃具有目标离子的离子可以调节晶体结构，电子结构，发光特性，辐射复合动力学和电学特征，从而提高器件性能。近年来，关于掺杂钙钛矿的研究很多，包括A部位，B部位和X部位的掺杂剂，但没有任何报告对钙钛矿纳米囊泡/量子点中的掺杂及其对LED的影响进行综述。在这篇综述中，我们总结了A位，B位和X位掺杂离子对LHP NCs / QDs的影响的最新进展概述。我们概述了掺杂剂对晶体结构，光学带隙，电子结构，光致发光，载流子动力学以及掺杂钙钛矿NCs / QD在LED中的应用的影响。审查表明，在不同地点进行掺杂会产生不同的影响。因此，有针对性的掺杂对于控制和改善材料性能和器件性能很重要。我们得出结论，掺杂是提高器件效率和稳定性的一种有前途的选择，并且在掺杂钙钛矿NC / QD领域中具有潜在的前景。