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Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD
Materials Research Letters ( IF 8.3 ) Pub Date : 2019-03-24 , DOI: 10.1080/21663831.2019.1594428
A. V. Pshyk 1 , E. Coy 1 , M. Kempiński 1, 2 , B. Scheibe 1 , S. Jurga 1
Affiliation  

Here we report on the structural and tribo-mechanical characterization of epitaxial single-crystalline Ti2AlC MAX phase thin films, grown by means of electron beam physical vapor deposition at relatively low temperature (700°C). The growth of phase pure Ti2AlC at a relatively lower temperature when compared to other PVD methods was achieved utilizing a relatively low deposition rate and layer-by-layer deposition technique. The epitaxial growth is evidenced through the combination of XRD, HR-TEM and Raman spectroscopy measurements. The nanomechanical and micro-scale tribological properties of the Ti2AlC thin films were studied by means of nanoindentation and nanoscratch tests.



中文翻译:

低速率逐层PVD低温生长外延Ti 2 AlC MAX相薄膜

在这里,我们报告通过在相对较低的温度(700℃)下通过电子束物理气相沉积法生长的外延单晶Ti 2 AlC MAX相薄膜的结构和摩擦机械特性。与其他PVD方法相比,采用相对较低的沉积速率和逐层沉积技术可以在相对较低的温度下生长纯Ti 2 AlC相。通过XRD,HR-TEM和拉曼光谱测量的结合证明了外延生长。通过纳米压痕和划痕试验研究了Ti 2 AlC薄膜的纳米力学和微观摩擦学性能。

更新日期:2019-03-24
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