Abstract

A review of experimental and theoretical studies on technology for producing the single-crystal substitutional solid solution of p-(GaAs)_{1 – x – y}(Ge₂)_x(ZnSe)_y on (GaAs) with the given crystallographic orientation using the liquid-phase epitaxy method is presented in this paper. The methods for determining the optimal parameters of the grown epitaxial films are given. Based on the analysis of literature data and the experimental results of the authors, the optimal parameters of epitaxial films are established. The solid solutions (GaAs)_0.69(Ge₂)_0.17(ZnSe)_0.14 have a sphalerite structure and possible configurations of the arrangement of atoms and molecules are determined. It has been established that paired Ge atoms partially replace GaAs molecules in the defective regions of the matrix lattice, and zinc selenide molecules form nanoislands on the surface layer of the GaAs_1 – xGe_x solid solution, which have the geometric shape dome, with lateral dimensions of 55–65 nm. Research investigating current transfer mechanisms in n-GaAs–p-(GaAs)_{1 – x – y}(Ge₂)_x(ZnSe)_y hetero-structures at room temperature show that in the voltage range from 0.7 to 3 V degree depends J = АV^α (α₁ = 2, α₂ = 2.7 and α₃ = 3) are observed, which arise due to the formation of complex recombination complexes. The noticeable photosensitivity of n-GaAs–p-(GaAs)_0.69(Ge₂)_0.17(ZnSe)_0.14 hetero-structure begins at the photon energy of 1.16 eV, and the maximum is observed at the photon energy of 1.38 eV. In the short-wave region of the emission spectrum, peaks are observed with maxima at photon energies of 1.37, 1.47, 1.65, 1.88, 2.3, and 2.62 eV, as well as the gentle portion at 2.26–2.46 eV. Analysis using the Gaussian approximation showed that these features of the photo-spectrum are related to the state of the atoms of the constituent components and their interaction when illuminated by sunlight. It has been established that heterostructures have the property of controlled selective photosensitivity.

中文翻译：

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n -GaAs– p-（GaAs）1 – x – y（Ge 2）x（ZnSe）y异质结构的合成，结构和电物理性质（综述）

摘要

使用液体在给定的晶体取向下生产p-（GaAs）_{1 –  x  –  y}（Ge ₂）_x（ZnSe）_y on（GaAs）的单晶替代固溶技术的实验和理论研究综述本文提出了一种相位外延方法。给出了确定生长的外延膜最佳参数的方法。通过对文献资料的分析和作者的实验结果，确定了外延膜的最佳参数。固溶体（GaAs）_0.69（Ge ₂）_0.17（ZnSe）_0.14具有闪锌矿结构，并确定了原子和分子排列的可能构型。已经确定，成对的Ge原子部分替换了基体晶格缺陷区域中的GaAs分子，并且硒化锌分子在GaAs _{1 –  x} Ge _x固溶体的表面层上形成了纳米岛，纳米岛具有几何形状的圆顶，横向尺寸为55-65 nm。研究n -GaAs– p-（GaAs）_{1 –  x  –  y}（Ge ₂）_x（ZnSe）_y中的电流传输机制在室温下显示异质结构，其在所述电压范围为0.7〜3 V程度取决于Ĵ = АV ^α（α ₁ = 2，α ₂ = 2.7和α ₃ = 3）观察到的，由于其出现于复合物的形成重组复合物。n -GaAs– p-（GaAs）_0.69（Ge ₂）_0.17（ZnSe）_0.14的显着光敏性异质结构从1.16 eV的光子能量开始，在1.38 eV的光子能量处观察到最大值。在发射光谱的短波区域，在1.37、1.47、1.65、1.88、2.3和2.62 eV的光子能量处观察到峰值，在2.26-2.46 eV处观察到平缓部分。使用高斯近似的分析表明，光光谱的这些特征与组成成分的原子的状态及其在阳光照射下的相互作用有关。已经确定，异质结构具有受控的选择性光敏性的性质。