Abstract

At the present time, 92% of the PV market is made using single crystal or polycrystalline wafer silicon. However, producing power with these cells remains expensive compared to conventional power generation. Thin film solar cells have been developed to reduce production costs, especially those based on cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS). Despite a number of successes in the development of thin film solar cells, some problems associated with the toxicity of cadmium and with the high cost of indium and gallium remain, which has prompted researchers to search for alternative materials for solar cells. Novel low cost and high efficiency zinc tin selenide (Zn_xSn_1 – xSe) thin film solar cells are without these drawbacks. However, there is no information in the literature about this new material. The samples of Zn_xSn_{1 – x}Se films were fabricated using the chemical molecular beam deposition (CMBD) method at atmospheric pressure in hydrogen flow. ZnSe and SnSe powders with 99.999% purity were used as precursors. The temperature of precursors varied in the range of 850–950°C. Films were deposited at substrate temperature of 500–600°C. Borosilicate glass was used as a substrate. The results showed that the composition of the samples changed toward ZnSe with the temperature of the substrate. The grain size of the samples increased from 2–5 μm to 15–17 μm at substrate temperatures of 500 and 550°C, respectively. At a substrate temperature of 600°C, the grain size decreased to 3–5 μm, which is possibly due to an increase in the ZnSe content. The X-ray diffraction pattern has shown that the samples have ZnSe, SnSe, Se, and Sn phases.

中文翻译：

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基板温度对薄膜太阳能电池ZnхSn 1 –хSe薄膜物理性能的影响

摘要

目前，使用单晶或多晶硅晶片制造的光伏市场占92％。但是，与常规发电相比，用这些电池发电仍然很昂贵。已经开发了薄膜太阳能电池以降低生产成本，特别是基于碲化镉（CdTe）和铜铟镓二硒化物（CIGS）的那些。尽管在薄膜太阳能电池的开发方面取得了许多成功，但仍存在一些与镉的毒性以及铟和镓的高成本有关的问题，这促使研究人员寻找太阳能电池的替代材料。新型低成本高效硒化锌锡（Zn _x Sn _{1 –  x}Se）薄膜太阳能电池没有这些缺点。但是，文献中没有有关这种新材料的信息。Zn _x Sn _{1 – x}的样本使用化学分子束沉积（CMBD）方法在大气压下在氢气流中制备Se膜。纯度为99.999％的ZnSe和SnSe粉末用作前体。前体的温度在850–950°C的范围内变化。薄膜的沉积温度为500–600°C。硼硅酸盐玻璃用作衬底。结果表明，样品的组成随衬底温度的变化而向ZnSe方向变化。在500和550°C的基底温度下，样品的晶粒尺寸分别从2–5μm增加到15–17μm。在衬底温度为600°C时，晶粒尺寸减小到3-5μm，这可能是由于ZnSe含量的增加。X射线衍射图表明样品具有ZnSe，SnSe，Se和Sn相。