Photon antibunching, a hallmark of quantum light, has been observed in the correlations of light from isolated atomic and atomic-like solid-state systems. Two-dimensional semiconductor heterostructures offer a unique method to create a quantum light source: Moiré trapping potentials for excitons are predicted to create arrays of quantum emitters. While signatures of moiré-trapped excitons have been observed, their quantum nature has yet to be confirmed. Here, we report photon antibunching from single moiré-trapped interlayer excitons in a heterobilayer. Via magneto-optical spectroscopy, we demonstrate that the discrete anharmonic spectra arise from bound band-edge electron-hole pairs trapped in moiré potentials. Last, we exploit the large permanent dipole of interlayer excitons to achieve large direct current (DC) Stark tuning up to 40 meV. Our results confirm the quantum nature of moiré-confined excitons and open opportunities to investigate their inhomogeneity and interactions between the emitters or energetically tune single emitters into resonance with cavity modes.

在孤立的原子和类似原子的固态系统发出的光的相关性中，已经观察到光子反聚束（量子光的标志）。二维半导体异质结构提供了一种创建量子光源的独特方法：激子的莫尔陷阱势能预计将创建量子发射器阵列。尽管观察到了莫尔陷波激子的特征，但其量子性质尚未得到证实。在这里，我们报道了异质双层中单个摩尔网陷阱夹层激子的光子反聚束。通过磁光光谱法，我们证明了离散的非谐谱是由陷于莫尔电位的束缚带边电子-空穴对产生的。最后，我们利用层间激子的大型永久偶极子来实现高达40 meV的大型直流（DC）Stark调谐。