The internal energy of metastable oxygen atoms in highly Ar diluted oxygen plasma was utilized in the initial stage of the atomic layer deposition of HfO 2 on SiO 2 /Si(100) at low temperature of 150 °C. The highly Ar dilute oxygen plasma enhanced the oxidation of the incomplete chemisorption state of the precursor at low temperature, successfully formed Hf silicate interface, and decreased the impurity nitrogen atoms in the HfO 2 film compared to the pure oxygen plasma ALD. Residual nitrogen atoms in the film were found to cause excessive precursor adsorption. The results of plasma emission spectroscopy and ion saturation current measurements show that the highly Ar-diluted O 2 plasma can increase the O radical formation rate for ion fluxes at pressures above 100 Pa. The relatively high metastable oxygen atom irradiation is thought to be responsible for the removal of HfN bonds and enable ALD on low temperature substrates. Atomic force mic...

中文翻译：

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高度Ar稀释的O 2等离子体增强了HfO 2原子层沉积中前体与低温基质的界面反应

在150°C的低温下，HfO 2在SiO 2 / Si（100）上的HfO 2原子层沉积的初始阶段利用了高度Ar稀释的氧等离子体中的亚稳态氧原子的内部能量。与纯氧等离子体ALD相比，高Ar稀释氧等离子体在低温下增强了前体的不完全化学吸附态的氧化，成功形成了Hf硅酸盐界面，并减少了HfO 2膜中的杂质氮原子。发现膜中残留的氮原子会导致过量的前体吸附。等离子体发射光谱和离子饱和电流测量的结果表明，在100 Pa以上的压力下，高度Ar稀释的O 2等离子体可以提高离子通量的O自由基形成率。人们认为，相对较高的亚稳态氧原子辐射可导致HfN键的去除，并使低温衬底上的ALD成为可能。原子力麦克风