Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal–semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapor deposition grown single-layer and bilayer WS₂ devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (∼10 kΩ μm at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities (∼190 cm² V^–1 s^–1) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS₂–indium interface. Our results reveal significant advances toward high-performance WS₂ devices using indium alloy contacts.

中文翻译：

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通过高效率载流子注入通过铟合金触点实现的二维WS2中的量子传输。

二维过渡金属二硫化碳（TMDC）具有吸引光电和量子应用的特性。设备的关键要素是金属-半导体界面。然而，高接触电阻阻碍了进展。量子传输研究很少，因为在低温下难以获得低质量的接触。在此，对与铟合金接触的化学气相沉积生长的单层和双层WS ₂器件执行与温度相关的传输长度测量。该器件具有较低的接触电阻和肖特基势垒高度（在3 K和1.7 meV时约为10kΩμm）。高效的载流子注入可实现高载流子迁移率（〜190 cm ² V ^–1 s ^–1）并观察共振隧穿。密度泛函理论计算提供了有关WS _2-铟界面的量子输运和性质的见解。我们的结果表明，使用铟合金触点的高性能WS ₂器件取得了显着进步。